| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
500 pcs
|
500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Capacitance @ Vr, F | |
| Current | |
| Diode Type | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Resistance @ If, F | |
| Storage Temperature | |
| Supplier Device Package | |
| Voltage |
The BAP65-02,115 is a planar silicon PIN diode from NXP Semiconductors, housed in an ultra-small SOD523 surface-mount package. It is designed for RF switching and attenuator applications, offering a 30V reverse voltage rating, 100mA forward current, and 715mW power dissipation. The diode exhibits low capacitance (0.375pF typical at 20V) and low forward resistance (350mOhm typical at 100mA), enabling efficient RF signal control up to 2.5GHz. Insertion loss is typically 0.07dB at 900MHz and 100mA, with isolation of 10dB at zero bias.
Typical applications include RF attenuators, switches, TV tuner bandswitching, and mobile communication transmit/receive switches. The device is AEC-Q101 qualified for automotive use, and its SOD523 packaging allows for compact PCB layouts. The operating junction temperature range is -65°C to 150°C, with a thermal resistance of 85K/W.
30 V.
100 mA.
0.9 V typical, 1.1 V maximum.
0.375 pF.
SOD-523.
0.07 dB at 100 mA forward current.
Yes, it is AEC-Q101 qualified.