| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,600,000 pcs
|
1600000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Capacitance @ Vr, F | |
| Current | |
| Diode Type | |
| Forward Current | |
| Forward Resistance (Typical/Maximum @ IF=0.5 mA, f=100 MHz) | |
| Forward Resistance (Typical/Maximum @ IF=1 mA, f=100 MHz) | |
| Forward Resistance (Typical/Maximum @ IF=10 mA, f=100 MHz) | |
| Forward Resistance (Typical/Maximum @ IF=100 mA, f=100 MHz) | |
| Forward Voltage | |
| Insertion Loss | |
| Isolation (Typical @ VR = 0 V, f = 1800 MHz) | |
| Isolation (Typical @ VR = 0 V, f = 2450 MHz) | |
| Isolation (Typical @ VR = 0 V, f = 900 MHz) | |
| Mounting Type | |
| Operating Temperature | |
| Operating Temperature - Junction | |
| Package / Case | |
| Package Type | |
| Power Dissipation | |
| Power Dissipation (Max) | |
| Qualification | |
| Resistance @ If, F | |
| Reverse Current | |
| Reverse Voltage | |
| Storage Temperature | |
| Supplier Device Package | |
| Termination Style | |
| Thermal Resistance (junction to solder point) | |
| Voltage | |
| diode_capacitance (Typical @ VR = 0 V, f = 1 MHz) | |
| diode_capacitance (Typical @ VR=1 V, f=1 MHz) | |
| diode_capacitance (Typical/Maximum @ VR = 20 V, f = 1 MHz) |
The BAP64LX,315 is a planar Silicon PIN diode manufactured by NXP Semiconductors in a leadless ultra small plastic SMD package (DFN1006D-2, SOD882D). It is designed for RF attenuators and switches operating up to 3 GHz.
Electrical characteristics include a maximum reverse voltage of 60V, a maximum forward current of 100mA, and a total power dissipation of 150mW. The diode features very low diode capacitance: 0.48pF typical at 0V bias, decreasing to 0.17pF typical at 20V. Forward resistance is low, ranging from 31Ω typical at 0.5mA to 0.9Ω typical at 100mA. Insertion loss at 900MHz is 2.15dB typical, and isolation at 900MHz is 22dB typical.
The device is qualified to AEC-Q101, making it suitable for automotive applications. It operates over a junction temperature range of -65°C to 150°C. The DFN1006D-2 package measures 1.0mm x 0.6mm x 0.4mm, with a cathode marking bar for orientation. The part is surface mount with no leads, and is RoHS3 compliant (unverified) with MSL level 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.29 | $0.29 |
| 10+ | $0.20 | $0.20 |
| 25+ | $0.18 | $0.18 |
| 100+ | $0.15 | $0.15 |
| 250+ | $0.14 | $0.14 |
| 500+ | $0.13 | $0.13 |
| 1,000+ | $0.13 | $0.13 |
| 2,500+ | $0.12 | $0.12 |
| 5,000+ | $0.12 | $0.12 |
| 10,000+ | $0.11 | $0.11 |
| 20,000+ | $0.11 | $0.11 |
| 30,000+ | $0.11 | $0.11 |
| 50,000+ | $0.11 | $0.11 |
| 70,000+ | $0.11 | $0.11 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum reverse voltage is 60 V.
The maximum forward current is 100 mA.
The forward voltage is 0.95 V typical and 1.1 V maximum at IF = 100 mA.
The package is DFN1006D-2 (SOD882D), a leadless ultra small plastic SMD package.
Typical diode capacitance is 0.48 pF at 0 V, 0.34 pF at 1 V, and 0.17 pF at 20 V (1 MHz). Maximum capacitance at 20 V is 0.3 pF.
Forward resistance is 0.9 Ω typical and 1.5 Ω maximum at IF = 100 mA and f = 100 MHz.
Yes, the BAP64LX,315 is AEC-Q101 qualified.