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BAP64-02,115 RF PIN diode from NXP Semiconductors with 175V reverse voltage, 100mA forward current, and 715mW power dissipation in a SOD-523 surface-mount package.
Mfr Part #:

BAP64-02,115

Available from 1 distributors
Mfr Name: NXP Semiconductors
NXP Semiconductors
RF PIN diode from NXP Semiconductors with 175V reverse voltage, 100mA forward current, and 715mW power dissipation in a SOD-523 surface-mount package.
Total Stock: 2,660 pcs

BAP64-02,115 Available from 1 distributors

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2,660 pcs
2660 pcs On Request 1 On Request On Request On Request On Request On Request

BAP64-02,115 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
AEC-Q101
Automotive Grade
Capacitance @ Vr, F
Charge Carrier Life Time
Current
Diode Type
Forward Current
Forward Voltage
Mounting Type
Operating Temperature
Package / Case
Power Dissipation (Max)
Resistance @ If, F
Reverse Voltage
Series Inductance
Storage Temperature
Supplier Device Package
Termination Style
Thermal Resistance (junction to solder point)
Total Power Dissipation
Voltage
diode_capacitance (Typical @ VR = 0 V, f = 1 MHz)
diode_capacitance (Typical/Maximum @ VR = 20 V, f = 1 MHz)
diode_forward_resistance (Typical/Maximum @ IF = 0.5 mA, f = 100 MHz)
diode_forward_resistance (Typical/Maximum @ IF = 1 mA, f = 100 MHz)
diode_forward_resistance (Typical/Maximum @ IF = 10 mA, f = 100 MHz)
diode_forward_resistance (Typical/Maximum @ IF = 100 mA, f = 100 MHz)
reverse_current (Maximum @ VR = 20 V)
reverse_current (Maximum @ VR = 60 V)

BAP64-02,115 Description

Short technical summary and product information.

The BAP64-02 is a planar PIN diode from NXP Semiconductors housed in an ultra-small SOD523 plastic SMD package. It is designed for high-frequency applications up to 6 GHz, making it suitable for RF attenuators and switches.

 

Key electrical specifications include a maximum reverse voltage of 175 V, a maximum forward current of 100 mA, and a total power dissipation of 715 mW at a solder point temperature of 90 °C. The diode features low capacitance (0.23 pF typical at 20 V reverse bias) and low forward resistance (0.7 Ω typical at 100 mA), enabling efficient RF switching and attenuation.

 

The device is AEC-Q101 qualified for automotive applications and operates over a junction temperature range of -65°C to +150°C. It is supplied in a surface-mount SOD-523 package with a marking code of S.

BAP64-02,115 Quick Information

Product Type: RF PIN Diode
Canonical Name: BAP64-02 Silicon PIN Diode
Subcategory: RF Diodes

BAP64-02,115 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BAP64-02,115 Features

  • High voltage PIN diode rated 175V.
  • Low diode capacitance of 0.23 pF typical.
  • Low forward resistance of 0.7 Ω typical.
  • AEC-Q101 qualified for automotive use.
  • Ultra-small SOD-523 surface-mount package.

BAP64-02,115 Applications

  • Ideal for RF attenuator circuits.
  • Used in RF switch applications.
  • Suitable for high-frequency designs up to 6 GHz.

BAP64-02,115 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum reverse voltage of the BAP64-02?

The maximum reverse voltage is 175 V.

What is the maximum forward current rating?

The maximum forward current is 100 mA.

What is the typical forward voltage at 50 mA?

The typical forward voltage is 0.95 V, with a maximum of 1.1 V at IF = 50 mA.

What package is the BAP64-02 available in?

The BAP64-02 is available in a SOD-523 surface-mount package (SC-79).

Is the BAP64-02 qualified for automotive applications?

Yes, the BAP64-02 is AEC-Q101 qualified.

What is the typical diode capacitance at 20 V reverse bias?

The typical diode capacitance is 0.23 pF at VR = 20 V and f = 1 MHz.

What is the operating temperature range?

The operating junction temperature range is -65°C to +150°C.

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