| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| AEC-Q101 | |
| Automotive Grade | |
| Capacitance @ Vr, F | |
| Charge Carrier Lifetime (τL) | |
| Current | |
| Diode Type | |
| Forward Current (IF) | |
| Insertion Loss (Lins) | |
| Isolation (ISL) | |
| Operating Temperature | |
| Operating Temperature (TJ) | |
| Operating Temperature (Tstg) | |
| Power Dissipation (Max) | |
| Resistance @ If, F | |
| Reverse Current (IR) | |
| Reverse Voltage (VR) | |
| Series Inductance (Ls) | |
| Storage Temperature | |
| Supplier Device Package | |
| Thermal Resistance (Rth(j-sp)) | |
| Total Power Dissipation (Ptot) | |
| Voltage | |
| diode_capacitance (Maximum @ VR = 1 V, f = 1 MHz) | |
| diode_capacitance (Maximum @ VR = 5 V, f = 1 MHz) | |
| diode_capacitance (Typical @ VR = 0 V, f = 1 MHz) | |
| forward_resistance (Maximum @ IF = 0.5 mA, f = 100 MHz) | |
| forward_resistance (Maximum @ IF = 1 mA, f = 100 MHz) | |
| forward_resistance (Maximum @ IF = 10 mA, f = 100 MHz) | |
| forward_resistance (Typical @ IF = 0.5 mA, f = 100 MHz, typ) | |
| forward_resistance (Typical @ IF = 1 mA, f = 100 MHz, typ) | |
| forward_resistance (Typical @ IF = 10 mA, f = 100 MHz, typ) | |
| forward_voltage (Maximum @ IF = 50 mA) | |
| forward_voltage (Typical @ IF = 50 mA, typ) |
The BAP51-06W,115 is a silicon PIN diode from NXP Semiconductors containing two planar PIN diodes in a common anode configuration, housed in a small SOT323 (SC-70) surface-mount plastic package. It is AEC-Q101 qualified for automotive applications.
Key electrical specifications include a maximum reverse voltage of 50V, a maximum forward current of 50mA, and a total power dissipation of 240mW at 90°C solder point temperature. The diode exhibits low forward voltage (1.1V max at 50mA), low diode capacitance (0.35pF max at 5V, 1MHz), and low forward resistance (1.5Ω typical at 10mA, 100MHz). RF characteristics at 2450MHz include typical isolation of 12dB and insertion loss of 0.28dB at 10mA. The typical charge carrier lifetime is 0.55μs, and series inductance is 1.6nH.
These features make the BAP51-06W,115 suitable for general RF applications such as switching, attenuators, and limiters in wireless communication systems. The device operates over a junction temperature range of -65°C to +150°C and has a thermal resistance of 250 K/W from junction to solder point.
The package is SOT323 (SC-70) with three leads, marked with code W7% (where % indicates country of origin). The device is RoHS3 compliant, REACH unaffected, and has an MSL rating of 1 (unlimited).
The maximum reverse voltage is 50V.
The maximum forward current is 50mA.
The maximum forward voltage is 1.1V, typical 0.95V at 50mA.
The maximum capacitance is 0.35pF at 5V and 1MHz.
The typical forward resistance is 1.5Ω at 10mA and 100MHz.
It is available in an SC-70 (SOT323) surface mount package.
Yes, the datasheet indicates AEC-Q101 qualification.