| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Industrial Grade | |
| Medical Grade | |
| Military Grade | |
| Storage Temperature | |
| Tape & Reel |
The NXP Semiconductors BAP51-06W is a single PIN diode suitable for RF applications. It features a maximum reverse voltage of 60V and a maximum continuous current of 100mA. The diode has a typical capacitance of 0.3pF at 20V and 1MHz, and a typical resistance of 1.5 Ohms at 100mA and 100MHz. Its maximum power dissipation is rated at 150mW.
This component operates within a temperature range of -65°C to 150°C (TJ). It is qualified under AEC-Q101 and is classified as an automotive-grade device. The diode is packaged in a compact DFN1006D-2 surface-mount case.
Compliance information indicates RoHS3 compliance, Moisture Sensitivity Level 1 (Unlimited), and REACH Unaffected status. The BAP51-06W is designed for applications requiring reliable RF switching and modulation capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.93 | $1.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum reverse voltage for the BAP51-06W is 60V.
The BAP51-06W has a maximum continuous current of 100mA.
The typical capacitance of the BAP51-06W at 20V and 1MHz is 0.3pF.
The operating temperature range for the BAP51-06W is -65°C to 150°C (TJ).
The BAP51-06W is supplied in a DFN1006D-2 package.