| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,000 pcs
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3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Current - Average Rectified (Io) | |
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| Voltage - DC Reverse (Vr) (Max) |
The BA885E6327 is a single PIN diode manufactured by Infineon Technologies, designed for RF switching and attenuation applications. It features a maximum DC reverse voltage of 50V and an average rectified current rating of 50mA. The diode exhibits a low capacitance of 0.6pF at 10V reverse bias and 1MHz test frequency, making it suitable for high-frequency signal routing.
This device is housed in a compact SOT-23-3 surface-mount package (also known as TO-236-3 or SC-59), with the supplier device package designated as PG-SOT23-3-11. The junction operating temperature is rated up to 150°C, supporting reliable performance in thermally demanding environments.
As a PIN diode, the BA885E6327 offers low distortion and fast switching characteristics, ideal for use in RF front-end modules, antenna switches, and variable attenuators. Its small footprint and standard SOT-23 packaging facilitate integration into space-constrained designs.
The maximum DC reverse voltage is 50V.
The average rectified current (Io) is 50mA.
The capacitance is 0.6pF at 10V reverse bias and 1MHz test frequency.
It is available in a SOT-23-3 surface-mount package (TO-236-3, SC-59, PG-SOT23-3-11).
The junction operating temperature is rated up to 150°C.
It is a single PIN diode.