| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,023 pcs
|
3023 pcs | On Request | 1 | On Request | On Request | 2014 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
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The B1261 from DXC is a PNP Silicon Epitaxial Planar Transistor. It is constructed using an epitaxial planar die process, offering features such as high DC current gain (hFE) and low collector-emitter saturation voltage (VCE(sat)).
Key electrical characteristics include a collector-emitter breakdown voltage (VCEO) of -60V and a continuous collector current (IC) of -3A. The transistor also exhibits a transition frequency (fT) of 50MHz and fast switching times with a fall time of 0.5μs and storage time of 2μs.
This component is housed in a TO-252 package, suitable for surface mounting. It is RoHS compliant and Halogen-free, making it suitable for various electronic applications where reliable performance and environmental considerations are important.
The device is designed for audio frequency amplifier and switching applications, particularly in hybrid integrated circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.17 | $1.17 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous collector current (IC) for the B1261 transistor is -3A.
The collector-emitter breakdown voltage (VCEO) for the B1261 transistor is -60V.
The B1261 transistor is supplied in a TO-252 package.
Yes, the B1261 transistor is RoHS3 Compliant.
The typical transition frequency (fT) for the B1261 transistor is 50MHz.