B11G3338N81DYZ The B11G3338N81DYZ is a dual section 3-stage fully integrated Doherty MMIC from Ampleon using LDMOS technology. It delivers 5W average output power with 33dB gain at 3600MHz and 28V drain supply.
Mfr Part #:

B11G3338N81DYZ

Available from 1 distributors
Mfr Name: Ampleon
Ampleon
The B11G3338N81DYZ is a dual section 3-stage fully integrated Doherty MMIC from Ampleon using LDMOS technology. It delivers 5W average output power with 33dB gain at 3600MHz and 28V drain supply.
Total Stock: 3,525 pcs
$ Price Range: $52.20 - $73.09

B11G3338N81DYZ Available from 1 distributor

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B11G3338N81DYZ Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Approval Agency
Configuration
Frequency
Gain
Halogen Free
Mounting Type
Number of Pins
SVHC Present
Supplier Device Package
Tape & Reel
Technology
Voltage

B11G3338N81DYZ Description

Short technical summary and product information.

The B11G3338N81DYZ is a dual section 3-stage fully integrated Doherty MMIC solution using Ampleon's state of the art LDMOS technology. The carrier and peaking device, input splitter, output combiner and pre-match are integrated in each section. This multiband device is suited as a general purpose driver in the frequency range 3300MHz to 3800MHz.

 

Key electrical specifications include a typical output power of 5W average, 33dB gain, and 21.5% drain efficiency when tested at 3600MHz with a 28V drain supply using a 1-carrier LTE 20MHz signal with 7.6dB PAR. The device operates from a 28V drain source voltage.

 

The B11G3338N81DYZ is housed in a 36-QFN Exposed Pad package with a supplier device package of 36-PQFN (12x7). It is designed for surface mount mounting. The device features integrated input splitter, output combiner, and pre-match for a 25 ohm output impedance.

B11G3338N81DYZ Quick Information

Product Type: RF MOSFET Transistor
Series: B11G3338N81D
Canonical Name: B11G3338N81DYZ LDMOS 3-stage Integrated Doherty MMIC
Subcategory: LDMOS Doherty MMIC

B11G3338N81DYZ Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): MSL 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: No

B11G3338N81DYZ Estimated Pricing

Qty Low High
1+ $73.09 $73.09
10+ $60.64 $60.64
25+ $57.71 $57.71
300+ $52.20 $52.20

Estimated market price range - modelled values for guidance only, not live distributor offers.

B11G3338N81DYZ Features

  • LDMOS 3-stage integrated Doherty MMIC.
  • 5W average output power at 3600MHz.
  • 33dB typical gain at 3600MHz.
  • 28V drain source voltage operation.
  • Surface mount 36-PQFN (12x7) package.

B11G3338N81DYZ Applications

  • Ideal for macrocell base station drivers.
  • Suitable for microcell base stations.
  • Used in 5G massive MIMO systems.
  • Designed for active antenna applications.

B11G3338N81DYZ FAQs

6 frequently asked questions generated from this part’s specifications.
What is the typical output power of the B11G3338N81DYZ?

The typical average output power is 5W at 3600MHz with a 28V drain supply.

What is the gain of the B11G3338N81DYZ at 3600MHz?

The typical gain is 33dB at 3600MHz with VDS=28V and PL(AV)=5W.

What is the operating frequency range of this device?

The frequency range is 3.3GHz to 3.8GHz.

What package does the B11G3338N81DYZ come in?

It comes in a 36-QFN Exposed Pad package, also specified as 36-PQFN (12x7).

What is the drain efficiency of the B11G3338N81DYZ?

The typical drain efficiency is 21.5% at 3600MHz with VDS=28V and PL(AV)=5W.

What technology is used in the B11G3338N81DYZ?

It uses LDMOS (Laterally Diffused Metal Oxide Semiconductor) technology.

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