| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,409 pcs
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1409 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The B1100B-13 is a 1.0A high voltage Schottky barrier rectifier from Diodes Incorporated, designed for low voltage, high frequency applications. It features a Schottky barrier chip with guard ring die construction for transient protection, ensuring reliable operation in demanding environments.
Key electrical specifications include a maximum peak repetitive reverse voltage of 100V, average rectified output current of 1A (at T_T = 125°C), and non-repetitive peak forward surge current rating of 30A. Typical forward voltage is 0.79V at 1A and 25°C, decreasing to 0.69V at 100°C. Maximum reverse current is 0.5mA at 25°C and 5mA at 100°C.
The device is housed in a molded plastic SMB (DO-214AA) package with solder plated terminals, suitable for automatic assembly. It has a junction capacitance of 80pF typical and thermal resistance of 25K/W junction to terminal. Operating and storage temperature range is -65°C to +150°C. The plastic material has UL flammability rating 94V-0.
The maximum peak repetitive reverse voltage is 100V.
The average rectified output current is 1A at T_T = 125°C.
The typical forward voltage is 0.79V at 1A and 25°C, and 0.69V at 1A and 100°C.
The device is available in a surface mount SMB (DO-214AA) package.
The non-repetitive peak forward surge current is 30A for an 8.3ms single half sine-wave.
The junction and storage temperature range is -65°C to +150°C.