| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Channel Type | |
| Current | |
| Driven Configuration | |
| Gate Type | |
| High Side Voltage | |
| Industrial Grade | |
| Input Type | |
| Lead Style | |
| Logic Voltage | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Number of Drivers | |
| Operating Temperature | |
| Rise | |
| SVHC Present | |
| Supplier Device Package | |
| Supplier Package | |
| Supply Voltage | |
| Tape & Reel | |
| Turn Off Time | |
| Turn On Time | |
| Voltage |
The AUIRS2181STR from Infineon Technologies is a high voltage, high speed power MOSFET and IGBT driver designed for robust performance in demanding applications. It features independent high and low-side referenced output channels, enabling flexible configuration for various power switching needs.
This driver is fully operational up to 600V and tolerates negative transient voltage with dV/dt immunity. The gate drive supply range is from 10V to 20V, with undervoltage lockout for both channels. It is compatible with 3.3V and 5V input logic and offers matched propagation delays for both channels. The output drivers provide a typical source/sink current capability of 1.9A and 2.3A, respectively, with a lower di/dt gate driver for improved noise immunity.
The AUIRS2181STR is housed in a standard 8-SOIC package, suitable for surface mount applications. Its typical operating temperature range is -40°C to 150°C. This component is automotive qualified and RoHS compliant, making it suitable for applications such as piezo/common rail injection, starter/alternator systems, electric power steering, and fan/compressor control.
Key electrical characteristics include a 600V high-side voltage capability, a 10V to 20V gate drive supply, and typical output currents of 1.9A source and 2.3A sink. The typical turn-on time is 160ns, and the turn-off time is 200ns. The device supports IGBT and N-Channel MOSFET gate driving.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.01 | $2.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600 V.
10 V to 20 V.
Source 1.9 A, sink 2.3 A.
Turn-on 160 ns, turn-off 200 ns, rise time 15 ns.
-40°C to 150°C.
8-SOIC (3.90 mm width).
2 independent channels.