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175 pcs
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175 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon AUIRFS4410Z is a HEXFET Power MOSFET specifically engineered for automotive applications. It utilizes advanced process technology to achieve an extremely low on-resistance per silicon area, with a typical value of 7.2mOhm at 25°C and 10V gate-to-source voltage.
This MOSFET boasts a continuous drain current of 97A at 25°C and can operate at junction temperatures up to 175°C. Key electrical characteristics include a drain-source voltage (Vds) of 100V and a gate-to-source voltage (Vgs) of ±20V. It also features fast switching speeds and improved repetitive avalanche ratings, making it suitable for demanding applications.
The AUIRFS4410Z is supplied in a D2-Pak package, designed for board mounting. The device is lead-free and RoHS compliant, meeting stringent environmental standards for automotive use. Its robust design ensures reliability in harsh automotive environments and a wide variety of other applications requiring high-performance power switching.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) is 100V.
The typical on-resistance (Rds(on)) is 7.2mOhm at a Vgs of 10V.
The continuous drain current (Id) is 97A at 25°C with a Vgs of 10V.
The operating junction temperature (Tj) ranges from -55°C to +175°C.
The AUIRFS4410Z is supplied in a D2-Pak package.
Yes, the AUIRFS4410Z is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.