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AUIRFR8401 N-Channel MOSFET from Infineon Technologies, rated for 40V drain-source voltage and 100A continuous drain current. Features ultra low on-resistance of 4.25mOhm and is automotive qualified.
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AUIRFR8401

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel MOSFET from Infineon Technologies, rated for 40V drain-source voltage and 100A continuous drain current. Features ultra low on-resistance of 4.25mOhm and is automotive qualified.
✓ Total Stock: 95 pcs

AUIRFR8401 Available from 1 distributor

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✓ Non-Authorised
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Bristol Electronics ✓
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95 pcs
On Request
95 pcs On Request 1 On Request On Request 2026-02-25 06:16:38 On Request On Request
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AUIRFR8401 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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AUIRFR8401 Description

Short technical summary and product information.

The AUIRFR8401 is an N-Channel power MOSFET from Infineon Technologies, part of the HEXFET family. It is designed for automotive applications and features advanced process technology for low on-resistance per silicon area.

 

Key electrical specifications: Drain-source voltage 40V, continuous drain current 100A at 25°C (silicon limited), pulsed drain current 400A. On-resistance typically 3.2mOhm, maximum 4.25mOhm at 60A, 10V. Gate threshold voltage maximum 3.9V at 50µA. Gate charge 63nC at 10V. Input capacitance 2200pF at 25V.

 

Thermal and reliability: Operating temperature range -55°C to 175°C. Maximum power dissipation 79W at case temperature 25°C. Junction-to-case thermal resistance 1.9°C/W. Single pulse avalanche energy 67mJ (thermally limited) and 94mJ (tested). Repetitive avalanche allowed up to maximum junction temperature.

 

Package and mounting: Surface mount D-Pak package (TO-252-3). Also available in I-Pak as AUIRFU8401. Lead-free and RoHS compliant. Automotive qualified. Suitable for applications such as electric power steering, battery switch, start/stop micro hybrid, heavy loads, and DC-DC converters.

AUIRFR8401 Quick Information

Product Type: MOSFET
Series: Automotive Grade
Canonical Name: Infineon AUIRFR8401 N-Channel MOSFET
Subcategory: Single

AUIRFR8401 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Yes

AUIRFR8401 Features

  • N-Channel HEXFET power MOSFET.
  • 40V drain-source voltage rating.
  • 100A continuous drain current.
  • Ultra low 4.25mOhm on-resistance.
  • Automotive qualified and RoHS compliant.

AUIRFR8401 Applications

  • Electric power steering systems.
  • Battery switch applications.
  • Start/stop micro hybrid systems.
  • DC-DC converter circuits.
  • Heavy load switching.

AUIRFR8401 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

40V.

What is the maximum continuous drain current?

100A at 25°C (silicon limited), 71A at 100°C.

What is the on-resistance?

Maximum 4.25mOhm at 60A, 10V.

What is the operating temperature range?

-55°C to 175°C (junction).

What package is available?

D-Pak (TO-252-3) surface mount.

Is it RoHS compliant?

Yes, RoHS3 compliant and lead-free.

What is the gate charge?

63nC at 10V.

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