SL3S1206FUD2/HAA-VB2
NXP Semiconductors
The NXP Semiconductors SL3S1206FUD2/HAA-VB2 is a Chassis Mount Resistor. It is RoHS3 Compliant and REACH Unaffected.
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1,973 pcs
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1973 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon AUIRFR4620 is a high-performance Power MOSFET specifically engineered for demanding automotive applications. It utilizes advanced process technology to achieve extremely low on-resistance per silicon area, with a typical Rds(on) of 64mΩ at VGS = 10V and ID = 24A. This device boasts a high continuous drain current capability of 24A at 25°C case temperature and a maximum drain-source breakdown voltage of 200V.
Key features include a 175°C maximum operating junction temperature, fast switching speeds, and an improved repetitive avalanche rating, making it suitable for a wide variety of applications beyond automotive. The MOSFET is available in the D-Pak package, supporting efficient thermal management.
With its robust design and high-performance characteristics, the AUIRFR4620 offers an efficient and reliable solution for power management in automotive systems and other demanding electronic designs.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source breakdown voltage (Vds) for the AUIRFR4620 is 200V.
The typical on-resistance (Rds(on)) of the AUIRFR4620 is 64mΩ at VGS = 10V and ID = 24A.
The maximum continuous drain current (Id) for the AUIRFR4620 is 24A at a case temperature of 25°C.
The maximum operating junction temperature (TJ) for the AUIRFR4620 is 175°C.
The AUIRFR4620 is supplied in the D-Pak package.
