| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,593 pcs
|
3593 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The AUIRFR4104TRL is an N-channel power MOSFET designed for automotive applications. It is built with Infineon's HEXFET technology and offers a maximum drain-source voltage of 40V and continuous drain current of 42A. The device features a low on-resistance of 5.5mOhm maximum at 10V gate drive and 42A drain current, minimizing conduction losses. The gate charge is 89nC maximum, and the input capacitance is 2950pF maximum, enabling efficient switching performance. Maximum power dissipation is 140W. The operating junction temperature range is -55°C to 175°C. It is housed in a surface-mount TO-252-3 (DPak) package, suitable for automated assembly.
The maximum drain-source voltage is 40V.
The maximum continuous drain current is 42A at case temperature.
It comes in a surface-mount TO-252-3 (DPak) package.
The operating junction temperature range is -55°C to 175°C.
The RoHS status is RoHS3 compliant, but this information is unverified.
The maximum on-resistance is 5.5mOhm at Vgs=10V and Id=42A.
The maximum gate threshold voltage is 4V at Id=250µA.