AUIRFB8409 N-Channel 40V 195A power MOSFET in TO-220AB package. Features ultra-low on-resistance of 1.3mΩ and 450nC gate charge.
Mfr Part #:

AUIRFB8409

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel 40V 195A power MOSFET in TO-220AB package. Features ultra-low on-resistance of 1.3mΩ and 450nC gate charge.
✓ Total Stock: 3,000 pcs

AUIRFB8409 Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
3,000 pcs
3000 pcs On Request 1 On Request On Request 21+ On Request On Request

AUIRFB8409 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

AUIRFB8409 Description

Short technical summary and product information.

The AUIRFB8409 is an N-Channel enhancement mode power MOSFET from Infineon's HEXFET family, designed for automotive and high-current applications. It features a drain-source voltage rating of 40V and a continuous drain current of 195A (package limited at 25°C). The device achieves an ultra-low maximum on-resistance of 1.3mΩ at 10V gate drive, with a typical value of 0.97mΩ.

 

This MOSFET supports a maximum junction temperature of 175°C and offers fast switching performance with a maximum gate charge of 450nC at 10V. The input capacitance is rated at 14240pF at 25V drain-source. It is capable of repetitive avalanche operation up to the maximum junction temperature, with a single pulse avalanche energy rating of 760mJ (thermally limited) and a tested value of 1360mJ.

 

The device is housed in a through-hole TO-220-3 package (TO-220AB) and is lead-free and RoHS compliant. It is suitable for applications such as electric power steering, battery switches, start/stop micro-hybrid systems, heavy loads, and DC-DC converters.

AUIRFB8409 Quick Information

Product Type: Power MOSFET
Canonical Name: AUIRFB8409 N-Channel Power MOSFET
Subcategory: Single MOSFETs

AUIRFB8409 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

AUIRFB8409 Features

  • Ultra-low on-resistance of 1.3mΩ maximum.
  • 175°C maximum junction temperature rating.
  • Fast switching with 450nC gate charge.
  • Repetitive avalanche rated up to Tjmax.
  • Automotive qualified HEXFET power MOSFET.

AUIRFB8409 Applications

  • Electric power steering (EPS) systems.
  • Battery switch and isolation applications.
  • Start/stop micro-hybrid vehicle systems.
  • Heavy load switching in automotive.
  • DC-DC converter and power supply designs.

AUIRFB8409 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the AUIRFB8409?

The maximum drain-source voltage (Vdss) is 40V.

What is the continuous drain current rating of the AUIRFB8409?

The continuous drain current is 195A (package limited at 25°C) and 409A (silicon limited at 25°C).

What is the on-resistance of the AUIRFB8409?

The maximum on-resistance is 1.3mΩ at 100A and 10V gate drive. Typical value is 0.97mΩ.

What is the operating temperature range of the AUIRFB8409?

The operating junction temperature range is -55°C to 175°C.

What package does the AUIRFB8409 come in?

The AUIRFB8409 is available in a through-hole TO-220-3 package (TO-220AB).

Is the AUIRFB8409 RoHS compliant?

The datasheet states the device is lead-free and RoHS compliant.

What is the gate charge of the AUIRFB8409?

The maximum gate charge (Qg) is 450nC at 10V gate-source voltage.

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