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400 pcs
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400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon AUIRF9Z34N is a P-Channel Power MOSFET utilizing advanced planar technology for high efficiency in automotive applications. It offers a continuous drain current of -19A at 25°C and -14A at 100°C, with a maximum breakdown voltage of -55V.
This HEXFET power MOSFET is designed for ruggedness and reliability, featuring a 175°C operating temperature and fast switching capabilities. The low on-resistance of 0.1Ω (max) per silicon area makes it suitable for various demanding applications. It comes in a TO-220AB package, suitable for through-hole mounting.
The AUIRF9Z34N is fully avalanche rated and allows repetitive avalanche energy up to Tjmax, ensuring robust performance under stress. Its design prioritizes low on-resistance and efficient switching, making it a dependable choice for automotive power management and other high-performance systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous drain current for the AUIRF9Z34N at 100°C is -14A.
The maximum on-resistance of the AUIRF9Z34N is 0.1Ω.
The operating junction and storage temperature range for the AUIRF9Z34N is -55°C to +175°C.
The AUIRF9Z34N is available in the TO-220AB package.