| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
234 pcs
|
234 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Drain to Source Voltage (Vdss) | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| SVHC Present | |
| Tape & Reel |
The Infineon AUIRF7749L2TR is an N-Channel MOSFET designed for demanding applications. It offers a robust 60V drain-to-source voltage and a high continuous drain current capability of 36A at 25°C ambient temperature, or 345A at case temperature.
Key electrical characteristics include a maximum gate threshold voltage of 4V at 250µA and a low on-resistance of 1.5mOhm maximum at 120A and 10V drive voltage. The device also features a maximum gate charge of 275nC at 10V and an input capacitance of 10655pF at 25V.
This MOSFET operates within a junction temperature range of -55°C to 175°C. It is housed in a DirectFET™ Isometric L8 package and is designed for surface mounting. The high power dissipation capability, rated at 3.8W at ambient and 341W at case temperature, makes it suitable for power-intensive designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.03 | $3.03 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
60V.
36A at ambient temperature (Ta) and 345A at case temperature (Tc).
1.5mOhm maximum at 120A drain current and 10V gate drive.
DirectFET Isometric L8 surface mount package.
-55°C to 175°C (junction temperature).
275nC maximum at 10V gate-to-source voltage.
10655pF maximum at 25V drain-to-source voltage.