| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,080 pcs
|
2080 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Lead Style | |
| Tape & Reel |
The Infineon AUIRF7416QTR is a P Channel HEXFET Power MOSFET specifically designed for automotive applications. It utilizes advanced processing techniques to achieve low on-resistance per silicon area, combined with fast switching speeds and a ruggedized device design.
Key electrical specifications include a Drain-to-Source Breakdown Voltage of -30V and a Continuous Drain Current of -10A at 25°C (VGS @ -10V). The Static Drain-to-Source On-Resistance is a maximum of 0.02 Ohms at VGS = -10V and ID = -5.6A. The Gate Threshold Voltage is -1V.
This MOSFET operates within a junction and storage temperature range of -55°C to +150°C. It features a maximum power dissipation of 2.5W at 25°C (TA) and a Junction-to-Ambient Thermal Resistance of 50°C/W. The device is fully avalanche rated and designed for dynamic dv/dt rating.
The AUIRF7416QTR is supplied in an SO-8 package and is tape and reel packaged with a standard quantity of 4000 units. It is lead-free and RoHS compliant, meeting automotive qualification standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous drain current is -10A at 25°C with a VGS of -10V.
The Drain-to-Source Breakdown Voltage is -30V under the condition VGS = 0V and ID = -250µA.
The static drain-to-source on-resistance is a maximum of 0.02 Ohms when VGS is -10V and ID is -5.6A.
The operating junction and storage temperature range is from -55°C to +150°C.
The AUIRF7416QTR is supplied in an SO-8 package.
Yes, the AUIRF7416QTR is lead-free and RoHS compliant.