| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
21 pcs
|
21 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Mounting Type | |
| SVHC Present | |
| Tape & Reel |
The Infineon AUIRF7343Q is an Automotive Grade HEXFET Power MOSFET featuring a dual SO-8 package. This device utilizes advanced planar technology to achieve extremely low on-resistance per silicon area. It offers a 55V drain-source voltage and continuous drain current ratings of 4.7A for the N-channel and -3.4A for the P-channel at 25°C.
Key features include ultra-low on-resistance, logic level gate drive, and a 150°C maximum junction operating temperature. The efficient SO-8 package provides enhanced thermal characteristics and dual MOSFET die capability, making it suitable for various power applications. This surface-mount device is available in Tape & Reel, helping to reduce board space.
Designed specifically for automotive applications, the AUIRF7343Q also excels in a wide variety of other applications requiring high efficiency and reliability. Its fast switching speed and improved repetitive avalanche rating contribute to its robust performance.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Drain-Source Voltage (Vds) for the N-Channel is 55V and for the P-Channel is -55V.
The typical On-Resistance (RDS(on)) is 0.043 Ohms.
The operating junction and storage temperature range is -55 to +150°C.
The AUIRF7343Q is available in the SO-8 package.
Yes, the AUIRF7343Q is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.