AUIRF1324WL N-Channel MOSFET with 24V drain-source breakdown voltage and 240A continuous drain current. Features ultra-low on-resistance of 1.3 mOhm and is automotive qualified.
Mfr Part #:

AUIRF1324WL

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel MOSFET with 24V drain-source breakdown voltage and 240A continuous drain current. Features ultra-low on-resistance of 1.3 mOhm and is automotive qualified.
✓ Total Stock: 857 pcs

AUIRF1324WL Available from 1 distributor

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AUIRF1324WL Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Storage Temperature
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

AUIRF1324WL Description

Short technical summary and product information.

The AUIRF1324WL is an N-Channel power MOSFET from Infineon Technologies, designed for automotive applications. It features a drain-source breakdown voltage of 24V and a continuous drain current of 240A (package limited) or 382A (silicon limited). The device offers an ultra-low on-resistance of 1.3 mOhm maximum (1.16 mOhm typical) at Vgs=10V, enabling high efficiency and reduced conduction losses.

 

This MOSFET is housed in a TO-262-3 wide leads through-hole package, which provides over 50% lower lead resistance compared to traditional TO-262 packages. It supports a maximum operating junction temperature of 175°C and has a power dissipation of 300W. The device is automotive qualified and RoHS compliant, making it suitable for harsh environments.

 

Key electrical characteristics include a gate threshold voltage of 4V, gate charge of 180 nC, and input capacitance of 7630 pF. The fast switching capability and repetitive avalanche rating allow for robust performance in demanding applications such as automotive engine control units, power distribution, and DC-DC converters.

AUIRF1324WL Quick Information

Product Type: MOSFET
Series: HEXFET
Canonical Name: AUIRF1324WL N-Channel MOSFET
Subcategory: Power MOSFET

AUIRF1324WL Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead-Free

AUIRF1324WL Features

  • Ultra-low on-resistance of 1.3 mOhm typical.
  • High current rating up to 240A continuous.
  • Automotive qualified for harsh environments.
  • 175°C maximum junction temperature.
  • TO-262-3 wide leads package.

AUIRF1324WL Applications

  • Used in automotive engine control modules.
  • Ideal for power distribution systems.
  • Suitable for DC-DC converters.
  • Designed for high-efficiency switching.

AUIRF1324WL FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of the AUIRF1324WL?

24V minimum.

What is the maximum drain current?

240A continuous (package limited) or 382A (silicon limited) at Tc.

What is the on-resistance?

1.3 mOhm maximum (1.16 mOhm typical) at Vgs=10V, Id=195A.

What package is the AUIRF1324WL available in?

TO-262-3 wide leads through-hole package.

What is the operating temperature range?

-55°C to 175°C junction temperature.

Is the AUIRF1324WL RoHS compliant?

Yes, it is RoHS3 compliant and lead-free.

Is this MOSFET automotive qualified?

Yes, it is automotive qualified.

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