ATP301-TL-H P-Channel MOSFET from On Semiconductor rated for 100V drain-source voltage and 28A continuous drain current. Features low on-resistance of 75mOhm at 10V gate drive.
Mfr Part #:

ATP301-TL-H

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
P-Channel MOSFET from On Semiconductor rated for 100V drain-source voltage and 28A continuous drain current. Features low on-resistance of 75mOhm at 10V gate drive.
✓ Total Stock: 9,987 pcs

ATP301-TL-H Available from 2 distributors

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
6,987 pcs
6987 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
3,000 pcs
3000 pcs On Request 1 On Request On Request On Request On Request On Request

ATP301-TL-H Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)

ATP301-TL-H Description

Short technical summary and product information.

The ATP301-TL-H is a P-Channel enhancement mode MOSFET manufactured by On Semiconductor. It is designed for high efficiency power management applications requiring a high-side switch in a compact surface mount package.

 

Key electrical specifications include a maximum drain-to-source voltage (Vdss) of 100V and a continuous drain current of 28A at ambient temperature (Ta). The device features a low typical on-resistance (Rds(on)) of 75 milliohms maximum at a gate-source voltage of 10V and drain current of 14A. Gate charge is 73nC at 10V, and input capacitance is 4000pF at 20V drain-source.

 

The MOSFET is housed in an ATPAK (2 leads+tab) surface mount package, which offers good thermal performance with a maximum power dissipation of 70W at case temperature (Tc). The device is RoHS3 compliant (unverified) and has an MSL rating of 1 (unlimited floor life). Operating junction temperature range is up to 150°C.

 

This component is suitable for power switching circuits, load switches, and DC-DC converter applications where a P-Channel device with high voltage and current capability is required. The surface mount package enables automated assembly.

ATP301-TL-H Quick Information

Product Type: P-Channel MOSFET
Canonical Name: ATP301-TL-H
Subcategory: Single P-Channel MOSFET

ATP301-TL-H Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

ATP301-TL-H Features

  • P-Channel MOSFET with 100V drain-source voltage.
  • Continuous drain current rating of 28A.
  • Low on-resistance of 75 milliohms maximum.
  • Surface mount ATPAK package for compact designs.
  • RoHS3 compliant and MSL level 1.

ATP301-TL-H Applications

  • Ideal for high-side load switching circuits.
  • Suitable for DC-DC converter applications.
  • Used in power management and battery protection.
  • Applicable for motor control and power switching.

ATP301-TL-H FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the ATP301-TL-H?

100V

What is the package type of the ATP301-TL-H?

ATPAK (2 leads+tab) surface mount

What is the maximum operating junction temperature?

150°C

Is the ATP301-TL-H RoHS compliant?

RoHS3 compliant (unverified)

What is the maximum on-resistance of this MOSFET?

75 milliohms at Vgs=10V, Id=14A

What is the gate charge of the ATP301-TL-H?

73 nC at Vgs=10V

What is the maximum drain current rating?

28A at ambient temperature

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