| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,259 pcs
|
1259 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
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| Vgs (Max) |
The ATP114-TL-H is a P-Channel MOSFET manufactured by ON Semiconductor. It features a drain-source voltage (Vdss) of 60V and a continuous drain current of 55A at ambient temperature. The device has a low on-resistance of 16mOhm maximum at 28A drain current and 10V gate-source voltage.
This MOSFET offers a gate charge of 92nC at 10V and an input capacitance of 4000pF at 20V drain-source voltage, enabling efficient switching performance. The maximum gate-source voltage is ±20V, and the maximum power dissipation is 60W at case temperature. The junction temperature can reach up to 150°C.
The ATP114-TL-H is housed in a surface mount ATPAK package with 2 leads plus tab, making it suitable for compact designs requiring high current handling. The device is designed for general power management and load switching applications.
60V.
Surface mount ATPAK with 2 leads+tab.
150°C.
RoHS3 compliant (unverified).
55A at ambient temperature.
92nC maximum at 10V gate-source voltage.
16mOhm maximum at 28A drain current and 10V gate-source voltage.