| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,859 pcs
|
2859 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) |
This product is a P-Channel MOSFET from On Semiconductor, designed for applications requiring efficient power switching. It features a maximum drain-to-source voltage of 60V and a continuous drain current of 25A at ambient temperature. The device offers a low on-resistance of 43 mΩ at a gate drive of 10V and 13A drain current, ensuring minimal conduction losses.
The MOSFET is built with Metal Oxide technology and supports a gate drive voltage range of 4V to 10V, with a maximum gate-source voltage of ±20V. It has a gate charge of 33.5 nC at 10V and an input capacitance of 1450 pF at 20V drain-source, facilitating efficient switching performance.
For thermal management, the device can dissipate up to 40W at case temperature and operates at a maximum junction temperature of 150°C. It is housed in an ATPAK surface mount package with two leads plus tab, suitable for automated assembly processes.
60V
ATPAK surface mount package with 2 leads plus tab.
150°C
43 mΩ maximum at 13A drain current and 10V gate-source voltage.
25A at ambient temperature.
RoHS3 Compliant (unverified).