ATP106-TL-H P-Channel power MOSFET with 40V drain-source voltage and 30A continuous drain current. Features low on-resistance of 25mΩ max at 10V drive and surface mount ATPAK package.
Mfr Part #:

ATP106-TL-H

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
P-Channel power MOSFET with 40V drain-source voltage and 30A continuous drain current. Features low on-resistance of 25mΩ max at 10V drive and surface mount ATPAK package.
✓ Total Stock: 3,984 pcs

ATP106-TL-H Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,835 pcs
2835 pcs On Request 1 On Request On Request 1752+ On Request On Request
Non-Authorised Inventory information
1,149 pcs
1149 pcs On Request 1 On Request On Request On Request On Request On Request

ATP106-TL-H Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)

ATP106-TL-H Description

Short technical summary and product information.

The ATP106-TL-H is a P-Channel power MOSFET from onsemi designed for medium-voltage switching applications. It features a maximum drain-to-source voltage of 40V and a continuous drain current rating of 30A. The static drain-source on-resistance is typically 19 mΩ and maximum 25 mΩ at VGS = -10V, enabling efficient power handling.

 

Electrical characteristics include a gate threshold voltage range of -1.5V to -2.6V, typical input capacitance of 1380 pF, and total gate charge of 29 nC. Switching times are specified with turn-on delay of 12 ns, rise time of 120 ns, turn-off delay of 110 ns, and fall time of 90 ns. The device also includes a built-in protection diode and supports avalanche energy up to 30 mJ.

 

The MOSFET is housed in an ATPAK surface mount package with two leads and a drain tab. It is supplied in tape and reel packaging with 3000 pieces per reel. The device is lead-free and halogen-free compliant, and the datasheet indicates Pb-free and halogen-free materials.

 

Typical applications include power management, load switching, DC-DC converters, and battery protection circuits. The 4.5V drive capability allows compatibility with low-voltage logic levels.

ATP106-TL-H Quick Information

Product Type: Power MOSFET
Series: ATP106
Canonical Name: ATP106-TL-H P-Channel Power MOSFET
Subcategory: P-Channel MOSFET

ATP106-TL-H Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

ATP106-TL-H Features

  • P-Channel MOSFET with 40V drain-source voltage.
  • Continuous drain current rating of 30A.
  • Low on-resistance of 25mΩ max at 10V.
  • Surface mount ATPAK package.
  • Halogen free and lead free compliant.

ATP106-TL-H Applications

  • Used in power management circuits.
  • Suitable for load switching applications.
  • Ideal for DC-DC converter designs.
  • Applicable in battery protection circuits.

ATP106-TL-H FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage?

40 V.

What is the continuous drain current rating?

30 A.

What is the typical on-resistance?

19 mΩ typical, 25 mΩ maximum at VGS=-10V, ID=-15A.

What is the operating junction temperature range?

Maximum junction temperature is 150°C. Storage temperature range is -55°C to +150°C.

What package is this MOSFET available in?

ATPAK surface mount package (2 leads+tab).

Is this device RoHS compliant?

Listed as RoHS3 Compliant in database but unverified. Datasheet confirms lead-free and halogen-free materials.

What is the gate threshold voltage?

-1.5V to -2.6V at VDS=-10V, ID=-1mA.

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