Mfr Part #:

ATF10136

Mfr Name: HP

The HP ATF10136 is a Gallium Arsenide FET designed for low noise amplification. It operates across a frequency range of 0.5-12 GHz.

✓ Total Stock: 39 pcs

$ Price Range: $0.99

ATF10136 Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Speed Components Ltd ✓ Non-Authorised Inventory information	39 pcs On Request	39 pcs	On Request	1	On Request	On Request	99+	On Request	On Request

ATF10136 Specifications Quick View

Most important parameters for selection – full specs in datasheet.

SELECT ALL

Category	New Products
Manufacturer Name	HP
Approval Agency	0.5-12 GHz
Frequency Range	0.5-12 GHz
Power Dissipation	430 mW
Tape & Reel	Available

View Similar Products (0)

ATF10136 Description

Short technical summary and product information.

The ATF10136 from HP is a high-performance Gallium Arsenide Schottky-barrier-gate field effect transistor. It is housed in a cost-effective microstrip package, making it suitable for applications requiring a premium noise figure.

This device is designed for use in the first stage of low noise amplifiers operating within the 0.5-12 GHz frequency range. Key electrical specifications include a typical noise figure of 0.5 dB at 4 GHz and a typical associated gain of 13.0 dB at 4 GHz. It operates with low bias conditions, typically VDS = 2 V and IDS = 20 mA.

The ATF10136 features a nominal 0.3 micron gate length and utilizes airbridge interconnects. Proven gold-based metallization systems and nitride passivation ensure a rugged and reliable device. The transistor is available in a 36 micro-X package, with a tape-and-reel packaging option also available.

Absolute maximum ratings include a Drain-Source Voltage of +5 V, Gate-Source Voltage of -4 V, and a maximum power dissipation of 430 mW at 25°C case temperature.

ATF10136 Quick Information

Product Type: Gallium Arsenide FET

Canonical Name: ATF10136 Gallium Arsenide FET

Subcategory: Gallium Arsenide FET

ATF10136 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

ATF10136 Estimated Pricing

Qty	Low	High
1+	$0.99	$0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

ATF10136 Features

Low noise figure of 0.5 dB typical.
High associated gain of 13.0 dB typical.
Operates from 0.5 to 12 GHz.
Low bias operation at 2V/20mA.
Cost-effective microstrip package.

ATF10136 Applications

Suitable for low noise amplifier designs.
Used in high-frequency communication systems.
Applicable in microwave circuit development.
Integrated into RF front-end modules.
Supports broadband signal amplification.

ATF10136 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the typical noise figure of the ATF10136?

The typical optimum noise figure is 0.4 dB at 2.0 GHz (VDS = 2 V, IDS = 25 mA) and 0.5 dB at 4 GHz (VDS = 2 V, IDS = 25 mA).

What is the typical gain of the ATF10136?

The typical gain is 16.5 dB at 2.0 GHz (VDS = 2 V, IDS = 25 mA), 13.0 dB at 4.0 GHz, and 11.0 dB at 6.0 GHz.

What is the maximum drain-source voltage for the ATF10136?

The maximum drain-source voltage is 5 V.

What is the maximum power dissipation of the ATF10136?

The maximum power dissipation is 430 mW.

What is the operating frequency range of the ATF10136?

The frequency range is 0.5-12 GHz.

What is the package type for the ATF10136?

The package type is 36 micro-X.

What is the storage temperature range for the ATF10136?

The storage temperature range is -65 °C to 175 °C.