| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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30,000 pcs
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30000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,005 pcs
|
2005 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The ATF-55143-TR1G is an E-pHEMT N-channel RF field-effect transistor from Broadcom Limited, supplied in a surface-mount SOT-343 (SC-82A) package. It is designed for RF applications operating at 2 GHz, delivering a typical gain of 17.7 dB, a typical noise figure of 0.6 dB, and a typical output power of 14.4 dBm under test conditions of 2.7 V drain voltage and 10 mA drain current.
This device features a maximum drain current rating of 100 mA and is characterized at a 2.7 V drain test voltage. The E-pHEMT technology provides low-noise performance suitable for receiver front-end and low-power amplifier stages in wireless communication systems.
The SOT-343 package is a compact 4-pin surface-mount configuration with gull-wing terminals, suitable for automated assembly in high-volume production. The part is intended for surface-mount mounting on printed circuit boards.
Typical applications include low-noise amplifiers, driver stages, and other RF signal conditioning circuits operating around 2 GHz where low noise figure and moderate gain are required.
The typical gain is 17.7 dB at 2 GHz.
The typical noise figure is 0.6 dB at 2 GHz.
The typical output power is 14.4 dBm at 2 GHz.
The package is SC-82A, SOT-343, with the supplier device package being SOT-343.
The maximum drain current is 100 mA.
The test conditions are 2.7 V drain voltage and 10 mA drain current at 2 GHz.