ATF-55143-TR1G E-pHEMT N-channel RF FET in SOT-343 package. Provides 17.7 dB typical gain, 0.6 dB typical noise figure, and 14.4 dBm typical output power at 2 GHz.
Mfr Part #:

ATF-55143-TR1G

Available from 2 distributors
Mfr Name: Broadcom Limited
Broadcom Limited
E-pHEMT N-channel RF FET in SOT-343 package. Provides 17.7 dB typical gain, 0.6 dB typical noise figure, and 14.4 dBm typical output power at 2 GHz.
✓ Total Stock: 32,005 pcs

ATF-55143-TR1G Available from 2 distributors

✓ Authorised
✓ Non-Authorised
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Non-Authorised Inventory information
30,000 pcs
30000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
2,005 pcs
2005 pcs On Request 1 On Request On Request On Request On Request On Request

ATF-55143-TR1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Current Rating (Amps)
Frequency
Gain
Mounting Type
Noise Figure
Number of Pins
Power
Supplier Device Package
Technology
Voltage

ATF-55143-TR1G Description

Short technical summary and product information.

The ATF-55143-TR1G is an E-pHEMT N-channel RF field-effect transistor from Broadcom Limited, supplied in a surface-mount SOT-343 (SC-82A) package. It is designed for RF applications operating at 2 GHz, delivering a typical gain of 17.7 dB, a typical noise figure of 0.6 dB, and a typical output power of 14.4 dBm under test conditions of 2.7 V drain voltage and 10 mA drain current.

 

This device features a maximum drain current rating of 100 mA and is characterized at a 2.7 V drain test voltage. The E-pHEMT technology provides low-noise performance suitable for receiver front-end and low-power amplifier stages in wireless communication systems.

 

The SOT-343 package is a compact 4-pin surface-mount configuration with gull-wing terminals, suitable for automated assembly in high-volume production. The part is intended for surface-mount mounting on printed circuit boards.

 

Typical applications include low-noise amplifiers, driver stages, and other RF signal conditioning circuits operating around 2 GHz where low noise figure and moderate gain are required.

ATF-55143-TR1G Quick Information

Product Type: RF Transistor
Canonical Name: E-pHEMT N-Channel RF FET
Subcategory: Transistors - FETs, MOSFETs - RF

ATF-55143-TR1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

ATF-55143-TR1G Features

  • E-pHEMT N-channel RF transistor technology.
  • 17.7 dB typical gain at 2 GHz.
  • 0.6 dB typical noise figure at 2 GHz.
  • 14.4 dBm typical output power at 2 GHz.
  • Surface-mount SOT-343 package.

ATF-55143-TR1G Applications

  • Ideal for low-noise RF amplifier stages.
  • Suitable for 2 GHz receiver front-ends.
  • Used in wireless communication driver circuits.
  • Good for RF signal conditioning applications.

ATF-55143-TR1G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the gain of the ATF-55143-TR1G at 2 GHz?

The typical gain is 17.7 dB at 2 GHz.

What is the noise figure of the ATF-55143-TR1G at 2 GHz?

The typical noise figure is 0.6 dB at 2 GHz.

What is the output power of the ATF-55143-TR1G at 2 GHz?

The typical output power is 14.4 dBm at 2 GHz.

What is the package type of the ATF-55143-TR1G?

The package is SC-82A, SOT-343, with the supplier device package being SOT-343.

What is the maximum drain current of the ATF-55143-TR1G?

The maximum drain current is 100 mA.

What is the test voltage and current for the ATF-55143-TR1G?

The test conditions are 2.7 V drain voltage and 10 mA drain current at 2 GHz.

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