ATF-13786-STR

The Hewlett-Packard ATF-13786-STR is a Gallium Arsenide (GaAs) Schottky barrier-gate field-effect transistor housed in an 85 mil plastic surface mount package. This device is engineered for use in low-cost, surface mount oscillators operating across RF and microwave frequencies.

Key electrical specifications include a typical maximum frequency (fMAX) of 60 GHz, a typical insertion power gain of 6.0 dB at 10 GHz, and a typical phase noise of -110 dBc/Hz at a 100 kHz offset. The output power at 10 GHz is up to 10 dBm, with a 1 dB gain compression point typically at 15 dBm. The transistor features a nominal 0.3 micron gate length and a total gate periphery of 250 microns.

This FET is particularly well-suited for low power commercial oscillator applications, such as those found in DBS, TVRO, and MMDS television receivers, or in hand-held transceivers operating in the 900 MHz, 2.4 GHz, and 5.7 GHz ISM bands. Its gate structure is optimized for superior phase noise performance.

The ATF-13786-STR is available in a surface mount plastic package, with tape-and-reel packaging also offered as an option. Absolute maximum ratings include a drain-source voltage of 4V and a power dissipation of 225 mW at 25°C.