| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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740 pcs
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740 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The ATF-10236-TR1 from HP is a high-performance Gallium Arsenide (GaAs) Schottky-barrier-gate field-effect transistor. It is housed in a cost-effective ceramic microstrip package, suitable for surface mount applications.
This device is engineered for low noise figure, with a typical value of 0.8 dB at 4 GHz. It also offers high associated gain, typically 13.0 dB at 4 GHz, and a high output power of 20.0 dBm typical P1dB at 4 GHz. The operating frequency range is from 0.5 to 12 GHz.
The ATF-10236 is designed for use in the first and second stages of low noise amplifiers. Its specifications include a nominal gate length of 0.3 microns and a total gate periphery of 500 microns. The device operates with low bias conditions, typically VDS = 2 V and IDS = 20 mA.
Packaging options include tape-and-reel, with the ATF-10236-TR1 part number indicating 1000 devices per 7" reel. The device is specified for a channel temperature up to 175°C and has a power dissipation of 430 mW at 25°C case temperature.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.20 | $1.20 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The ATF-10236-TR1 operates from 0.5 to 12 GHz.
The typical noise figure is 0.6 dB at 2 GHz.
The typical gain is 16.5 dB at 2 GHz.
The typical P1dB is 20.0 dBm at 4 GHz.
It is available in a 36 micro-X surface mount package.
The maximum drain-source voltage is +5 V.
The maximum power dissipation is 430 mW at 25°C case temperature.