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50 pcs
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50 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The ATF-10136-STR is a high-performance Gallium Arsenide (GaAs) Schottky-barrier-gate field-effect transistor from Agilent Technologies. It is housed in a cost-effective microstrip package and is suitable for use in the first stage of low noise amplifiers operating within the 0.5-12 GHz frequency range.
Key electrical specifications include a typical noise figure of 0.5 dB at 4 GHz, a typical associated gain of 13.0 dB at 4 GHz, and a typical output power (P1 dB) of 20.0 dBm at 4 GHz. The device operates with low bias, typically VDS = 2 V and IDS = 20 mA.
This GaAs FET features a nominal 0.3-micron gate length and uses airbridge interconnects. Proven gold-based metallization systems and nitride passivation ensure a rugged and reliable device. The ATF-10136-STR is available in a 36 micro-X package suitable for surface mounting.
Absolute maximum ratings include a drain-source voltage of 5 V, a gate-source voltage of -4 V, and a power dissipation of 430 mW at 25°C case temperature. The channel temperature can reach up to 175°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.84 | $1.84 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The typical noise figure is 0.5 dB at 4 GHz.
The typical gain is 13.0 dB at 4 GHz.
The typical output power (P1 dB) is 20.0 dBm at 4 GHz.
The operating frequency range is 0.5-12 GHz.
The package type is a 36 micro-X, surface mount.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.