| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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331 pcs
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331 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel |
The ATF-10136-STR from HP is a high-performance Gallium Arsenide (GaAs) Schottky-barrier-gate field-effect transistor. It is housed in a cost-effective ceramic microstrip package, making it suitable for applications requiring a premium noise figure.
This device operates effectively in the 0.5–12 GHz frequency range. Key electrical specifications include a typical noise figure of 0.5 dB at 4 GHz, a typical associated gain of 13.0 dB at 4 GHz, and a typical output power (P1 dB) of 20.0 dBm at 4 GHz. It operates with low bias conditions, typically VDS = 2 V and IDS = 20 mA.
The ATF-10136 features a nominal 0.3-micron gate length and utilizes airbridge interconnects. Proven gold-based metallization and nitride passivation ensure a rugged and reliable device. The transistor is available in a 36 micro-X package and is suitable for surface mounting.
A tape-and-reel packaging option is available for automated assembly processes, with 1000 units per standard reel.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.84 | $1.84 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The typical noise figure is 0.5 dB at 4 GHz.
The typical gain is 13.0 dB at 4 GHz.
The typical output power (P1 dB) is 20.0 dBm at 4 GHz.
The device operates in the 0.5–12 GHz frequency range.
The package type is a 36 micro-X ceramic microstrip package.
Yes, the RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.