| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,222 pcs
|
3222 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Access Time | |
| ESD Protection | |
| Memory Format | |
| Memory Interface | |
| Memory Organization | |
| Memory Size | |
| Memory Type | |
| Mounting Type | |
| Operating Temperature | |
| Operating Voltage | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Voltage |
The AT27LV512A-12TC is a high-performance, low-power, 512Kbit One-Time Programmable (OTP) Read-Only Memory (ROM) organized as 64K by 8 bits. It is designed for applications requiring a reliable non-volatile memory solution.
This EPROM features a fast read access time of 120 ns and supports dual voltage operation, functioning with either a low voltage supply range of 3.0V to 3.6V or a standard 5V ± 10% supply range. Its low power CMOS operation includes a standby current of 20 µA maximum at 3.6V and active power dissipation of 29 mW maximum at 5 MHz.
The device is available in a 28-TSOP package, suitable for surface mount applications. It offers CMOS and TTL compatible inputs and outputs, adhering to JEDEC standards for LVTTL. High reliability is ensured through 2,000V ESD protection and 200 mA latchup immunity.
Ideal for portable systems and dual-supply range applications, the AT27LV512A-12TC provides a flexible and efficient memory solution.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The device supports two voltage ranges: 3.0V to 3.6V and 4.5V to 5.5V.
The AT27LV512A-12TC is offered in a 28-TSOP surface mount package. Other package options include 330-mil SOIC and 32-Lead PLCC.
The device operates over a case temperature range of 0°C to 70°C.
The memory is organized as 64K words by 8 bits (64K x 8).
The maximum access time is 120ns.
Typical programming time is 100µs per byte.
Maximum standby current is 20µA, with typical values less than 1µA.