| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,900 pcs
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1900 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The AT-41533-TR1G from Avago Technologies is an NPN bipolar junction transistor (BJT) suitable for various electronic applications. This component operates with a collector-emitter breakdown voltage of 12V and can handle a continuous collector current of up to 50mA. It offers a maximum power dissipation of 225mW and a frequency rating of 10000MHz.
The transistor is housed in a compact SOT-23-3 surface-mount package, making it ideal for space-constrained designs. It is supplied on tape and reel for automated assembly processes. The minimum hFE is specified at 30 under test conditions of 5mA collector current and 5V collector-emitter voltage. The gain is typically between 9dB and 14.5dB.
This part is classified under BJTs and is designed for applications requiring a reliable NPN transistor with specific RF characteristics. Its specifications make it a suitable choice for signal amplification and switching in RF circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage is 12V.
The continuous collector current rating is 50mA.
The maximum power dissipation is 225mW.
The AT-41533-TR1G is supplied in a SOT-23-3 package.
The AT-41533-TR1G is packaged on tape and reel (TR).
The minimum hFE is 30 at 5mA collector current and 5V collector-emitter voltage.