| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
35,000 pcs
|
35000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Gain | |
| Lead Style | |
| Mounting Type | |
| Noise Figure (dB Typ @ f) | |
| Operating Temperature | |
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| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Voltage |
The AT-32033-TR1 is a high-performance NPN silicon bipolar transistor designed for low-voltage, battery-powered RF applications. It is optimized for 2.7V operation and delivers excellent noise figure and gain performance. The transistor features a maximum collector-emitter voltage of 5.5V, maximum collector current of 32mA, and power dissipation of 200mW. DC current gain ranges from 70 to 300 at VCE=2.7V, IC=2mA. At 900MHz, typical noise figure is 1 dB to 1.3 dB with associated gain of 11 dB to 12.5 dB at the same bias point.
The device is housed in a standard SOT-23 surface-mount package (also known as TO-236-3 or SC-59), compatible with high-volume assembly processes. The operating junction temperature is rated up to 150°C. This transistor is suitable for use as a low-noise amplifier, gain stage, buffer, oscillator, or active mixer in 900MHz, 1.8GHz, and 2.4GHz wireless systems. The die is fabricated using Agilent's Self-Aligned-Transistor (SAT) process with gold metallization for reliability.
| Qty | Low | High |
|---|---|---|
| 21,000+ | $0.16 | $0.16 |
| 30,000+ | $0.16 | $0.16 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
5.5V
SOT-23 (TO-236-3, SC-59, SOT-23-3)
150°C (junction)
RoHS3 compliant per existing data, but unverified — conflict with distributor spec.
70 to 300 at VCE=2.7V, IC=2mA
1 dB to 1.3 dB typical at VCE=2.7V, IC=2mA
11 dB to 12.5 dB typical at VCE=2.7V, IC=2mA