Mfr Part #:

AT-32011-TR1

AT-32011-TR1 is a high performance NPN silicon bipolar RF transistor from Broadcom Limited. It features a 5.5V collector-emitter breakdown voltage, 32mA collector current, and low noise figure of 1.0-1.3 dB at 900 MHz.

✓ Total Stock: 9,000 pcs

$ Price Range: $0.17 - $0.18

AT-32011-TR1 Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Components Technology Group, Inc. ✓ Non-Authorised Inventory information	9,000 pcs On Request	9000 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

AT-32011-TR1 Description

Short technical summary and product information.

The AT-32011-TR1 is a high performance NPN silicon bipolar RF transistor from Broadcom Limited, optimized for low voltage battery powered applications. It is fabricated using Agilent's 10 GHz fT, 30 GHz fMAX Self-Aligned-Transistor (SAT) process, providing excellent high frequency performance.

Key electrical specifications include a collector-emitter breakdown voltage of 5.5 V, a collector current of 32 mA, and a power dissipation of 200 mW. The DC current gain (hFE) is a minimum of 70 at Ic=2 mA, Vce=2.7 V. At 900 MHz, the typical noise figure ranges from 1.0 to 1.3 dB with associated gain of 12.5 to 14 dB at Vce=2.7 V, Ic=2 mA. The transition frequency (fT) is 10 GHz and maximum oscillation frequency (fMAX) is 30 GHz.

The transistor is housed in a surface mount SOT-143 package (also specified as TO-253-4 / TO-253AA), suitable for high volume assembly. The operating junction temperature is 150°C. The part is supplied in tape and reel packaging (TR1 suffix). It is listed as RoHS3 compliant and REACH unaffected, though these compliance statuses are unverified.

AT-32011-TR1 Quick Information

Product Type: RF Bipolar Transistor

Canonical Name: AT-32011-TR1 NPN Silicon Bipolar RF Transistor

Subcategory: Low Noise RF Transistor

AT-32011-TR1 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 (Unlimited)

REACH Status: REACH Unaffected

Lead Free: No

AT-32011-TR1 Estimated Pricing

Qty	Low	High
21,000+	$0.18	$0.18
30,000+	$0.17	$0.17

Estimated market price range - modelled values for guidance only, not live distributor offers.

AT-32011-TR1 Features

NPN silicon bipolar RF transistor.
Optimized for low voltage operation.
Low noise figure of 1.0-1.3 dB.
High gain of 12.5-14 dB at 900 MHz.
Surface mount SOT-143 package.

AT-32011-TR1 Applications

Ideal for low noise amplifiers in 900 MHz systems.
Used in battery powered wireless applications.
Suitable for gain stages and oscillators.
Active mixer in RF front ends.

AT-32011-TR1 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the collector-emitter breakdown voltage?

5.5 V.

What package is the AT-32011-TR1 available in?

It is available in a TO-253-4 / TO-253AA package, with a supplier device package of SOT-143.

What is the maximum operating junction temperature?

150°C.

Is the AT-32011-TR1 RoHS compliant?

Yes, it is listed as RoHS3 compliant (unverified).

What is the typical noise figure at 900 MHz?

1.0 to 1.3 dB at Vce=2.7V, Ic=2mA.

What is the typical gain at 900 MHz?

12.5 to 14 dB at Vce=2.7V, Ic=2mA.

What is the transition frequency (fT)?

10 GHz.

Category	Transistors - Bipolar (BJT) - RF
Manufacturer Name	Broadcom Limited
Current	32 mA
DC Current Gain (hFE) (Min) @ Ic, Vce	70 @ 2mA, 2.7V
Gain	12.5dB ~ 14dB
Halogen Free	No
Mounting Type	Surface Mount
Noise Figure (dB Typ @ f)	1 dB ~ 1.3 dB @ 900MHz
Operating Temperature	150°C (TJ)
Power	200 mW
Storage Temperature	-65°C ~ 150°C
Supplier Device Package	SOT-143
Transistor Type	NPN
Voltage	5.5 V