| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,015 pcs
|
2015 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Density | |
| Industrial Grade | |
| Interface | |
| Lead Spacing | |
| Lead Style | |
| Operating Temperature | |
| SVHC Present |
The Alliance AS9FxxG08SA series, including the AS9F38G08SA-25BIN, provides high-density SLC Parallel NAND Flash memory solutions. This 8Gb device features an x8 bus width and is designed for cost-effective mass storage applications.
Key electrical specifications include a supply voltage range of 2.7V to 3.6V for the 3.3V version, with a sequential access time of 25 ns (min.) at 3.3V. The memory is organized into blocks that can be erased independently, with a block erase time of 3.5 ms (Typ) for densities of 4Gb and 8Gb. Data retention is rated for 10 years with 100,000 Program/Erase cycles.
This NAND Flash memory supports an ONFI 1.0 compliant command set and features like Cache Read for improved throughput. It is available in a 63-ball FBGA package and operates within an industrial temperature range of -40°C to 85°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The AS9F38G08SA-25BIN has a density of 8 Gbit.
This device supports a supply voltage of 3.3V (2.7V ~ 3.6V).
The sequential access time at 3.3V is a minimum of 25 ns.
The operating temperature range is -40°C to 85°C for industrial applications.
The AS9F38G08SA-25BIN is supplied in a 63-ball FBGA package.
The data retention period is 10 years.
It can withstand 100,000 Program/Erase cycles.