| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,694 pcs
|
3694 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Industrial Grade | |
| Lead Style | |
| Operating Temperature | |
| SVHC Present |
The Alliance AS9Fxx Series, including the AS9F32G08SA-25BIN, offers cost-effective solutions for mass storage applications. This 2Gb SLC Parallel NAND Flash memory operates with a dual supply voltage of 1.8V (1.7V to 1.95V) or 3.3V (2.7V to 3.6V) and features an x8 bus width interface.
Key features include a fast block erase time of 3.5 ms (typ), cache read for improved throughput, and copy back program functionality without external buffering. The device supports 100,000 Program/Erase cycles with 4-bit ECC per 528 bytes and offers 10 years of data retention. Read access time is 25 ns (min) for sequential access at 3.3V and 45 ns (min) at 1.8V. Page program time is 300 us (typ) for both voltage ranges.
This NAND flash memory is compliant with the ONFI 1.0 command set. It is available in a 63-ball FBGA package measuring 9.0 x 11 x 1.0 mm. The operating temperature range is -40°C to 85°C for industrial applications and -40°C to 105°C for Automotive Grade 2.
The memory is organized into blocks that can be erased independently. The AS9F32G08SA-25BIN is suitable for mass storage applications where reliability and cost-effectiveness are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The device supports 3.3V (Vcc=2.7V~3.6V) and 1.8V (Vcc=1.7V~1.95V) supply voltages.
It is available in a 63-ball FBGA package measuring 9.0x11x1.0 mm.
Industrial range: -40°C to 85°C; Automotive Grade 2: -40°C to 105°C.
Typical block erase time is 3.5 ms.
10 years, with 4-bit ECC per 528 bytes required.
2 KB (2048 bytes plus 128 spare bytes).