| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,455 pcs
|
5455 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| ESD Protection | |
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The AS7C34096A-10TIN from Alliance Memory is a 4,194,304-bit Static Random Access Memory (SRAM) device organized as 524,288 words by 8 bits. Designed for applications requiring fast data access, low power consumption, and simple interfacing, this SRAM features an address access time of 10 ns and an output enable access time of 4 ns. It operates from a single 3.3V supply voltage and is TTL-compatible.
The device supports easy memory expansion through its Chip Enable (CE) input. When CE is high, the device enters standby mode, consuming a maximum of 28.8 mW. In active mode, power consumption is a maximum of 650 mW at 10 ns. The AS7C34096A-10TIN is available in industry-standard 400-mil 36-pin SOJ and 44-pin TSOP 2 packages, suitable for surface mounting.
Key features include equal access and cycle times, center power and ground pins, and TTL-compatible, three-state I/O. ESD protection is rated at ≥ 2000 volts, and latch-up current is ≥ 200 mA.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The AS7C34096A-10TIN operates at a nominal 3.3V supply voltage.
The AS7C34096A-10TIN is offered in a 36-pin SOJ (400 mil) package and a 44-pin TSOP 2 package, both surface mount.
The maximum address access time is 10 ns for the -10 speed grade.
Maximum active power consumption is 650 mW at 10 ns cycle time.
Maximum CMOS standby power consumption is 28.8 mW.
The device is organized as 524,288 words by 8 bits (512K x 8).
The device provides minimum 2000V ESD protection and minimum 200mA latch-up immunity.