K6T0808C1D-GB55
Samsung Electronics
The K6T0808C1D-GB55 is a 32Kx8 bit low power CMOS static RAM from Samsung Electronics. It operates at 5V with a speed of 70 ns.
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8,438 pcs
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8438 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| SVHC Present |
The AS7C3256A-XXTIN from Alliance Memory, Inc. is a SRAM (Static Random-Access Memory) module designed for various electronic applications. This component features a memory organization of 32K words by 8 bits, providing a total capacity suitable for data storage and retrieval tasks.
Key electrical characteristics include its SRAM technology, which offers fast access times and low power consumption compared to DRAM. The 8-bit data width allows for efficient data transfer in systems requiring byte-addressable memory.
This memory module is compliant with RoHS3 standards and has a Moisture Sensitivity Level (MSL) of 1, indicating it is not sensitive to moisture and can be handled without special precautions. The REACH status is unaffected, suggesting compliance with relevant chemical regulations.
Designed for integration into electronic systems, the AS7C3256A-XXTIN is a reliable component for applications requiring volatile memory. Its specifications make it suitable for use in embedded systems, industrial controls, and consumer electronics where dependable memory performance is essential.
| Qty | Low | High |
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| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The AS7C3256A-XXTIN is a SRAM (Static Random-Access Memory) module.
The memory organization is 32K words by 8 bits.
The data width is 8-bit.
Yes, the AS7C3256A-XXTIN is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
The REACH status is Unaffected.
