| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
578 pcs
|
578 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| ESD Protection | |
| Mounting Type | |
| Number of Pins | |
| Operating Voltage |
The AS7C31026B-12TIN from Alliance Memory is a high-performance 1Mb (65,536 words x 16 bits) Fast Asynchronous Static Random Access Memory (SRAM) device. Designed for applications requiring fast data access, low power consumption, and simple interfacing, this SRAM features an address access time of 12 ns and an output enable access time of 6 ns.
This device operates at a 3.3V supply voltage and offers low power consumption in both active and standby modes. It supports TTL-compatible, three-state I/O and is available in JEDEC standard 44-pin SOJ (400 mil) and 44-pin TSOP 2 packages. The center power and ground pins are designed for low noise operation. ESD protection is rated at greater than 2000 volts, and latch-up current is greater than 200 mA.
Key features include easy memory expansion capabilities via CE and OE inputs. The AS7C31026B is suitable for various embedded systems and applications where speed and reliability are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
3.3V.
44-pin TSOP II and SOJ surface mount packages.
65,536 words x 16 bits (1Mb).
12 ns maximum.
6 ns maximum.
288 mW maximum at 10 ns.
18 mW maximum (CMOS I/O).