| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,754 pcs
|
2754 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
40 pcs
|
40 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| ESD Protection | |
| Mounting Type | |
| Operating Voltage |
The AS7C256A-20JIN is a high-performance CMOS Static Random-Access Memory (SRAM) device organized as 32,768 words by 8 bits. Operating at 5V, this SRAM is designed for applications requiring fast data access.
Key features include address access times as fast as 10 ns and output enable access times as fast as 5 ns. The device offers very low power consumption in both active and standby modes. It supports easy memory expansion through Chip Enable (CE) and Output Enable (OE) inputs.
Available in standard 28-pin SOJ (300 mil) and TSOP-I (8 x 13.4 mm) packages, the AS7C256A-20JIN is suitable for various board designs. It also features TTL-compatible, three-state I/O, ESD protection, and latch-up immunity.
This SRAM is designed for memory applications requiring fast data access at low voltage, including use in computing and embedded systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The nominal operating voltage is 5V.
It is available in 28-pin TSOP-I and 300 mil SOJ surface mount packages.
32,768 words x 8 bits (256Kb).
20 ns for the -20 speed grade.
Maximum active power is 412.5 mW at 10 ns cycle time; maximum standby power is 11 mW.
Minimum 2000 V.
2.0V minimum.