| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,000 pcs
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3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1 pcs
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1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Alliance Memory AS7C1024B-12TJCNTR is a high-speed CMOS Static Random Access Memory (SRAM) device organized as 131,072 words by 8 bits, totaling 1Mbit of memory.
This SRAM features a fast address access time of 12 ns and an output enable access time of 7 ns, making it suitable for high-performance applications. It operates with a supply voltage ranging from 4.5V to 5.5V. The device consumes a maximum of 605 mW in active mode at 10 ns and 55 mW in CMOS standby mode.
Designed for simple interfacing, the AS7C1024B utilizes TTL/LVTTL-compatible, three-state I/O. It is available in a 32-pin SOJ package, suitable for surface mounting. The operating temperature range is 0°C to 70°C.
Key features include easy memory expansion capabilities with CE1 and CE2 inputs, and ESD protection exceeding 2000 volts. The device also has a latch-up current rating of at least 200 mA.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The AS7C1024B-12TJCNTR has a memory size of 1 Mbit, organized as 131,072 words x 8 bits.
The maximum address access time is 12 ns, and the maximum output enable access time is 7 ns.
The operating voltage range is 4.5V to 5.5V.
The operating temperature range is 0°C to 70°C.
The AS7C1024B-12TJCNTR is available in a 32-SOJ (0.300", 7.62mm Width) surface mount package.
The maximum active power consumption is 605 mW at 10 ns cycle time, and the maximum standby power consumption is 55 mW in CMOS mode.