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1 pcs
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1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The AS7C1024B-12TJCNTR is a high-speed CMOS Static Random Access Memory (SRAM) device organized as 131,072 words by 8 bits, totaling 1Mbit of memory. It is designed for applications requiring rapid data access, low power consumption, and straightforward interfacing.
This SRAM features an address access time of 12 ns and an output enable access time of 5 ns, making it suitable for high-performance systems. It operates with a supply voltage ranging from 4.5V to 5.5V. The device consumes a maximum of 605 mW in active mode at 10 ns and 55 mW in CMOS standby mode.
Designed for easy memory expansion, the AS7C1024B utilizes CE1 and CE2 inputs. It is compatible with TTL/LVTTL logic levels and offers three-state I/O. The device is available in a 32-pin SOJ package, specifically the 300 mil variant, suitable for surface mounting.
Key features include industrial and commercial temperature options, ESD protection exceeding 2000 volts, and a latch-up current of at least 200 mA. The AS7C1024B is built using 6T 0.18µm CMOS technology.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.24 | $1.24 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
12 ns maximum.
4.5V to 5.5V.
32-SOJ (32-BSOJ, 0.300", 7.62mm width) surface mount.
605 mW at 10 ns cycle.
55 mW maximum.
5 ns maximum.
12 ns maximum (word, page).