| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Access Time | |
| Lead Spacing | |
| Lead Style | |
| Memory Format | |
| Memory Interface | |
| Memory Organization | |
| Memory Size | |
| Memory Type | |
| Mounting Type | |
| Operating Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Voltage | |
| Write Cycle Time |
The AS6C62256-55PCN is a 262,144-bit low power CMOS static random access memory organized as 32,768 words by 8 bits. Fabricated using high-performance CMOS technology, this SRAM is designed for low power applications, including battery-backed nonvolatile memory.
Key electrical specifications include an access time of 55ns, an operating voltage range of 2.7V to 5.5V, and a typical operating current of 15mA at 3.0V. The standby current is a low 1µA at 3.0V. It offers a data retention voltage of 1.5V minimum.
This component is suitable for applications requiring reliable data storage with minimal power consumption. Its fully static operation and tri-state output ensure compatibility with various system designs. The device operates within a temperature range of 0°C to 70°C.
The AS6C62256-55PCN is available in a 28-pin PDIP package, designed for through-hole mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $15.11 | $15.11 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
2.7V to 5.5V.
256Kbit, organized as 32K x 8.
55 ns.
28-pin PDIP (28-DIP, 0.600 inch, 15.24mm) with through-hole mounting.
0°C to 70°C.
Parallel.
Typical operating current is 15 mA at VCC = 3.0V; standby current is 1 µA at VCC = 3.0V.