BC847B/215
Nexperia USA Inc.
The Nexperia USA Inc. BC847B/215 is a bipolar transistor. It is RoHS3 Compliant and has an MSL Level 1 rating.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,720 pcs
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3720 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| SVHC Present |
The AS6C4016-55BIN from Alliance Memory, Inc. is an asynchronous SRAM memory integrated circuit with a capacity of 4 Mbit, organized as 256K x 16 bits. It offers a fast parallel interface with an access time and write cycle time of 55 nanoseconds.
This memory IC is designed for surface mount applications and comes in a compact 48-TFBGA package measuring 6 mm x 8 mm. It operates reliably within a supply voltage range of 2.7V to 3.6V and an industrial temperature range of -40°C to 85°C.
As a volatile memory, it requires continuous power to retain data. The AS6C4016-55BIN is suitable for applications requiring fast, temporary data storage in embedded systems. It is noted as being obsolete.
Key specifications include a 4Mbit memory size, 256K x 16 organization, 55ns access time, and a 48-TFBGA package. The device supports a parallel memory interface and operates from 2.7V to 3.6V.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The AS6C4016-55BIN has a memory capacity of 4 Mbit.
The access time for the AS6C4016-55BIN is 55 ns.
The AS6C4016-55BIN operates within a voltage supply range of 2.7 V to 3.6 V.
The operating temperature range for the AS6C4016-55BIN is -40°C to 85°C.
The AS6C4016-55BIN is supplied in a 48-TFBGA package.
The AS6C4016-55BIN is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the AS6C4016-55BIN is 3 (168 hours).