| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,093 pcs
|
1093 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Access Time | |
| Industrial Grade | |
| Lead Spacing | |
| Lead Style | |
| Operating Temperature | |
| SVHC Present |
The AS6C1016-55ZIN from Alliance Memory is a 1,048,576-bit low power CMOS static random access memory, organized as 65,536 words by 16 bits. Fabricated using high-performance CMOS technology, this SRAM is designed for low power applications, including battery-backed non-volatile memory systems.
Key electrical specifications include a fast access time of 55ns, low operating current of 20mA (typical), and a very low standby current of 2µA (typical). It operates from a single power supply ranging from 2.7V to 5.5V, and all inputs and outputs are TTL compatible. The device supports data retention down to 1.5V.
This component is available in a 44-pin TSOP-II package, suitable for industrial temperature ranges from -40°C to 85°C. Its fully static operation and tri-state output make it versatile for various memory interface designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
55 ns maximum.
64K words by 16 bits (65,536 x 16).
2.7V to 5.5V.
2 µA typical.
TSOP-II and TFBGA.
-40°C to 85°C.
1.5V minimum.