| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
146 pcs
|
146 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-02-23 21:33:16 |
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The AS6C1016-55ZIN is a 1Mbit asynchronous SRAM from Alliance Memory, organized as 65,536 words by 16 bits (65K x 16). It features a typical access time of 55 ns and a write cycle time of 55 ns, making it suitable for high-speed memory applications. The device operates over a wide supply voltage range of 2.7V to 5.5V, with typical operating current of 18-20 mA and a low standby current of 2 µA. It also supports data retention down to 1.5V minimum.
The SRAM is available in a 44-pin TSOP II package (0.400" width, 10.16mm) and also offered in a 48-ball TFBGA package. It is designed for surface mount assembly and operates over an industrial temperature range of -40°C to +85°C. The asynchronous interface simplifies integration without the need for a clock signal.
Typical applications include embedded systems, industrial controls, networking equipment, and any application requiring fast, low-power static RAM with a wide voltage range.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.24 | $1.24 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
2.7V to 5.5V.
44-TSOP II and 48-ball TFBGA.
-40°C to +85°C.
55 ns.
65K x 16 (65,536 words x 16 bits).
2 µA typical.
55 ns.