BC847BS.115
NXP Semiconductors
The BC847BS.115 is a bipolar transistor array from NXP Semiconductors. It features RoHS3 compliance and an MSL of 1 Unlimited.
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21,702 pcs
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21702 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The AS6C1008J-55STIN is a Static Random-Access Memory (SRAM) component manufactured by Alliance Memory. This part is designed for applications requiring fast data access and non-volatility without the need for a refresh cycle, characteristic of SRAM technology.
Key specifications include RoHS3 compliance, indicating adherence to environmental standards for hazardous substances. It also carries a Moisture Sensitivity Level (MSL) of 1, signifying unlimited shelf life under standard conditions and ease of handling during assembly. The REACH status is unaffected, further detailing its compliance with global chemical regulations.
Alliance Memory is known for providing memory solutions, including synchronous DRAM, asynchronous SRAM, and NOR flash memory. Their products are often positioned as alternatives or equivalents to offerings from major manufacturers like Micron, providing reliable memory components for a wide range of electronic devices and systems. The AS6C1008J-55STIN fits within this portfolio as a dependable SRAM option.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The AS6C1008J-55STIN is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
The REACH status is REACH Unaffected.