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AS4C8M32MSA-6BIN The AS4C8M32MSA-6BIN is a 256Mbit Low Power SDRAM from Alliance Memory, Inc. It features a 166 MHz clock speed and operates with a voltage range of 1.14V to 1.95V.
Mfr Part #:

AS4C8M32MSA-6BIN

Available from 1 distributors
Mfr Name: Alliance Memory, Inc.
Alliance Memory, Inc.
The AS4C8M32MSA-6BIN is a 256Mbit Low Power SDRAM from Alliance Memory, Inc. It features a 166 MHz clock speed and operates with a voltage range of 1.14V to 1.95V.
✓ Total Stock: 65 pcs
$ Price Range: $1.24

AS4C8M32MSA-6BIN Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Bristol Electronics ✓
Non-Authorised Inventory information
65 pcs
On Request
65 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

AS4C8M32MSA-6BIN Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Access Time
Clock Frequency
Memory Format
Memory Interface
Memory Organization
Memory Size
Memory Type
Mounting Type
Operating Temperature
Supplier Device Package
Technology
Voltage
Write Cycle Time
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AS4C8M32MSA-6BIN Description

Short technical summary and product information.

The Alliance Memory AS4C8M32MSA-6BIN is a high-performance 256Mbit CMOS Dynamic RAM (DRAM) organized as 8M x 32. This device is designed for low active current and extremely low standby current, making it suitable for mobile applications. It is compatible with the JEDEC standard LP-SDRAM specification.

 

Key electrical specifications include a maximum clock frequency of 166 MHz, an access time of 5.5 ns, and a write cycle time of 15 ns. The operating voltage range is from 1.14V to 1.95V. The device operates within an industrial temperature range of -40°C to +85°C.

 

Packaged in a compact 90-ball FBGA with a 0.8 mm ball pitch (8mm x 13mm), the AS4C8M32MSA-6BIN supports a parallel memory interface. Its low power features include Auto TCSR, Partial Array Self Refresh, and Deep Power Down Mode. The LVCMOS compatible IO interface ensures broad system compatibility.

 

This SDRAM is ideal for applications requiring high-speed memory and reliable low power operation, such as mobile devices, consumer electronics, networking systems, and industrial equipment.

AS4C8M32MSA-6BIN Quick Information

Product Type: SDRAM
Canonical Name: AS4C8M32MSA-6BIN Low Power SDRAM
Subcategory: SDRAM

AS4C8M32MSA-6BIN Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

AS4C8M32MSA-6BIN Estimated Pricing

Qty Low High
1+ $1.24 $1.24

Estimated market price range - modelled values for guidance only, not live distributor offers.

AS4C8M32MSA-6BIN Features

  • 256Mbit Low Power SDRAM
  • 166 MHz maximum clock frequency
  • 5.5 ns fast access time
  • 1.14V to 1.95V operating voltage
  • Industrial temperature range (-40°C to 85°C)

AS4C8M32MSA-6BIN Applications

  • Suitable for mobile devices
  • Ideal for consumer electronics
  • Used in networking systems
  • Robust for industrial equipment
  • Applicable to embedded systems

AS4C8M32MSA-6BIN FAQs

7 frequently asked questions generated from this part’s specifications.
What is the clock frequency of the AS4C8M32MSA-6BIN?

166 MHz.

What is the memory organization?

8M x 32.

What is the access time?

5.5 ns.

What is the supply voltage range?

1.14V to 1.95V.

What is the operating temperature range?

-40°C to 85°C.

What package is this device available in?

90-FBGA (8x13).

What is the write cycle time?

15 ns.

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