| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | 2316 | On Request | On Request |
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The AS4C8M16SA-6TINTR from Alliance Memory is a high-speed CMOS synchronous DRAM with a density of 128 Mbits. It is internally configured as 4 Banks of 2M word x 16 DRAM, featuring a synchronous interface where all signals are registered on the positive edge of the clock signal.
Key electrical specifications include a fast clock rate of 166 MHz, an access time from clock of 5 ns, and a write cycle time of 12 ns. The device operates from a single +3.3V ± 0.3V power supply. It supports programmable burst lengths and an auto precharge function.
This SDRAM is housed in a 54-pin TSOP II package, suitable for surface mounting. The operating temperature range is industrial, from -40°C to 85°C. These devices are well-suited for applications requiring high memory bandwidth, such as high-performance PC applications.
Features include fully synchronous operation, internal pipelined architecture, and programmable mode registers for CAS Latency, Burst Length, and Burst Type. Auto Refresh and Self Refresh capabilities are also included, with 4096 refresh cycles per 64ms.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.24 | $1.24 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating voltage is 3.3V (3.0V to 3.6V).
The package is 54-TSOP II (0.400", 10.16mm Width) surface mount.
The industrial temperature range is -40°C to 85°C.
The memory size is 128 Mbit organized as 8M x 16.
The clock frequency is 166 MHz.
The maximum access time from clock is 5 ns.
The memory interface is parallel.