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16 pcs
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16 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Alliance Memory AS4C64M8D1-5TCN is a high-speed CMOS double data rate synchronous DRAM (DDR SDRAM) with a capacity of 512 Mbits. It operates at a fast clock rate of 200MHz and utilizes a SSTL_2 I/O interface.
This memory IC is internally configured as a quad 16M x 8-bit DRAM, offering a memory organization of 64M x 8. It supports programmable burst lengths of 2, 4, or 8 and features Auto Refresh and Self Refresh capabilities. The device operates with a power supply range of 2.3V to 2.7V and has an access time of 700 ps.
The AS4C64M8D1-5TCN is designed for applications requiring high memory bandwidth, making it suitable for main memory and graphics applications. It is available in a 66-TSOP II package, designed for surface mounting.
Key features include a fast clock rate, fully synchronous operation, and programmable mode registers for optimized performance. The operating temperature range for this commercial-grade component is 0°C to 70°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.24 | $1.24 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The memory size is 512Mbit.
The clock frequency is 200 MHz.
The operating voltage is 2.3V to 2.7V.
The operating temperature is 0°C to 70°C (TA).
It is available in a 66-TSOP II package and a 66-TSSOP (0.400", 10.16mm Width) package.
The memory organization is 64M x 8.
The RoHS status is RoHS3 Compliant.